A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned ...
Firstly, a brief introduction was given to commonly used two-dimensional materials, including graphene, transition metal dichalcogenides (TMDC), black phosphorus (BP), and hexagonal boron nitride ...
The fast development of artificial intelligence has called for high-efficiency neuromorphic computing hardware. While two-dimensional floating-gate memories show promise, their limited state numbers ...